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BLM2004NE PDF Datasheet

The BLM2004NE is N-channel Enhancement Mode Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BLM2004NE
N-Channel Enhancement Mode Power MOSFET

Pb Free Product BLM2004NE N-Channel Enhancement Mode Power MOSFET Description The BLM2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A Typ.RDS(ON) = 17mΩ @ VGS=

BELLING
BELLING
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Fuji Electric
Fuji Electric
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S UBMINIA TURE FUSES UBMINIATURE WICKMANN 4/3 79 TR5® / No. 37 374/3 4/379 UL 248-14, 250V , T 250V, Time-Current Characteristic Time Lag (T) Specifications Packaging 00: Tape/Ammopack (1000 pcs.) 41: Short Leads - Bulk (1000 pcs.) Standard UL 248-14 CSA C22.2 No. 248.14 M

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