| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | BLL1214-250R | LDMOS L-band radar power transistor BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF perfor |
 NXP Semiconductors |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to BLL1214-250R |
| Part No | Description ( Function) | Manufacturers | |
| BLL1214-250 | L-band radar LDMOS transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES • High power gain • |
NXP Semiconductors |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||