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Datasheet BLC6G10-160 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BLC6G10-160UHF power LDMOS transistor

BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typica
NXP Semiconductors
NXP Semiconductors
transistor


BLC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BLC149BLC149

BLC149 变容二极管 描述: 硅外延变容管 应用: 收音机中作调谐 极限值: 参数名称 Parameter 符号 Symbol 数值 Rating 最小值 最大值 -55 -55 >20 125 0.5 100 125 18 单位 Unit 工作环境温度 Assignment Temperature Range 贮存温�
SHANGHAI BELLING
SHANGHAI BELLING
data
2BLC210Inverter Transformers

Inverter Transformers BLC210 BLC210HP DESCRIPTION 8.0 4.0 1.4 3.0 10.3Max. 7.8 0.8 0.5 5.3Max. 21.0Max. 24.9 29.0 4.0 8.0 0.6 2-1.7 7.8 APPLICATION TYPE BLC210 TOKO Part Number 846TN-1006 846TN-1009 Input Voltage (V) 6.5 7.5 Output Voltage (V) rms 1200 1320 Input Curren
TOKO
TOKO
transformer
3BLC6G10-160UHF power LDMOS transistor

BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typica
NXP Semiconductors
NXP Semiconductors
transistor
4BLC6G10-200UHF power LDMOS transistor

BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typi
NXP Semiconductors
NXP Semiconductors
transistor
5BLC6G10LS-160UHF power LDMOS transistor

BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typica
NXP Semiconductors
NXP Semiconductors
transistor
6BLC6G10LS-200UHF power LDMOS transistor

BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typi
NXP Semiconductors
NXP Semiconductors
transistor
7BLC6G20-110UHF power LDMOS transistor

BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance R
NXP Semiconductors
NXP Semiconductors
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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