| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | BL3361E | Low-power narrowband FM BL3361E 1. BL3361E 2. 2.1 VCCmin=2.0V ICC =5.2mA (VCC=5.0V) 2.5uV 60MHz SOP 16 2.0V 2.2 1 2 3 4 5 6 7 8 OSC1 OSC2 OUT M F VC C INLIM DEC OUT LIM OUT DET FM 1 2 9 OUTAF 10 INFIL 11 OUTFIL 12 NC 13 NC 14 NC 15 GND 16 INMF Page1 wwww.belling.com.cn V1.1 3. 3.1 RF 3.2 AF BL3361E Tamb= 25 VC C V8 P P V16 Tj PD Tamb Tstg 10 1.0 1.0 150 1.5 -40~85 -55~125 V VP P V W |
 BELLING |
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Recommended search results related to BL3361E |
| Part No | Description ( Function) | Manufacturers | |
| BL3361 | LOW POWER NARROW BAND FM IF BL3361 LOW POWER NARROW BAND FM IF BL3361 DESCRIPTION The BL3361 is designed for use in FM dual conversion communication. It contains a complete narrow band FM demodulation system operable to less than 2.0V supply voltage. This low power narrow band FM IF system provides the seco |
BELLING |
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| BL3361D | Low narrowband FM 1. BL3361D 2. 2.1 VCCmin=2.0V ICCQ=5.5mA (VCC=5.0V) 2.5uV 60MHz SOP16 BL3361D 2.0V 2.2 1 2 3 4 5 6 7 8 1.8k OSC1 OSC2 OUT M F VC C INLIM DEC OUT LIM OUT DET FM 1 2 + 10p 50k 52k 1.8k 9 OUTAF 10 INFIL 11 OUTFIL 12 INSQU 13 CONSCAN 14 MUTE 15 GND 16 INMF Page1 www.bellin |
BELLING |
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| 2SC3361 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim. Swit |
 Sanyo Semicon Device |
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| 2SC3361 | NPN Epitaxial Planar Silicon Transistors SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3361 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 |
 Kexin |
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| 2SK3361 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3361 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3361 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching app |
 NEC |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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