No | Part number | Description ( Function ) | Manufacturers | |
1 | BH3561AF | Post amplifier applicable with 1-bit D / A converter Optical disc ICs Post amplifier applicable with 1-bit D / A converter BH3561AF The BH3561AF is a post amplifier applicable with 1-bit D / A converter for compact disc players. FApplications CD players, etc. FFeatures 1) 2-channel analog filter IC for 1-bit D / A converters. 2) Internal partial CR for two channels (left and right) LPF. FBlock diagram 3) Operates on a single po |
ROHM Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
2SC3561 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High sp |
Inchange Semiconductor |
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2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ |
Toshiba |
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2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ |
Toshiba Semiconductor |
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2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ |
Toshiba Semiconductor |
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2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μ |
Toshiba |
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