No | Part number | Description ( Function ) | Manufacturers | |
1 | BGF844 | GSM800 EDGE power module DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.5 W – Gain = 30 dB – Efficiency = 16% – ACPR < −65 dBc at 400 k |
NXP Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
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