Datasheet BFY450ES Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFY450ES	HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25-	Infineon Technologies AG

BFY45 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFY450	HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT	Infineon Technologies AG
BFY450S	HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT	Infineon Technologies AG
BFY450ES	HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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