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Datasheet BFY420ES Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BFY420ES | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequenc |  Infineon Technologies AG | transistor |
BFY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BFY180 | NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
BFY 180
Micro  Siemens Semiconductor Group transistor | | |
| 2 | BFY180 | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va Infineon Technologies AG transistor | | |
| 3 | BFY180ES | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va Infineon Technologies AG transistor | | |
| 4 | BFY180H | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va Infineon Technologies AG transistor | | |
| 5 | BFY180P | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va Infineon Technologies AG transistor | | |
| 6 | BFY180S | HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va Infineon Technologies AG transistor | | |
| 7 | BFY181 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 561 Siemens Semiconductor Group transistor | |
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