| No | Part number | Description ( Function ) | Manufacturers | |
| 5 | BFY420 | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 |
 Infineon Technologies AG |
|
| 4 | BFY420ES | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 |
Infineon Technologies AG |
|
| 3 | BFY420H | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 |
Infineon Technologies AG |
|
| 2 | BFY420P | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 |
Infineon Technologies AG |
|
| 1 | BFY420S | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 |
Infineon Technologies AG |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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