Datasheet BFY183ES Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFY183ES	HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611	Infineon Technologies AG

BFY18 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFY183	HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC De	Infineon Technologies AG
BFY183	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Det	Siemens Semiconductor Group
BFY181	HiRel NPN Silicon RF Transistor BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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