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BFY183 PDF Datasheet

The BFY183 is Hirel NPN SilICon Rf Transistor, Hirel NPN SilICon Rf Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 BFY183
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 BFY 183 Micro-X1 ESD: Electrostatic discharge sensitive device, observe h

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
5 BFY183
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin

Infineon Technologies AG
Infineon Technologies AG
pdf
4 BFY183ES
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin

Infineon Technologies AG
Infineon Technologies AG
pdf
3 BFY183H
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin

Infineon Technologies AG
Infineon Technologies AG
pdf
2 BFY183P
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin

Infineon Technologies AG
Infineon Technologies AG
pdf
1 BFY183S
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin

Infineon Technologies AG
Infineon Technologies AG
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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