No | Part number | Description ( Function ) | Manufacturers | |
6 | BFY183 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 BFY 183 Micro-X1 ESD: Electrostatic discharge sensitive device, observe h |
Siemens Semiconductor Group |
|
5 | BFY183 | HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin |
Infineon Technologies AG |
|
4 | BFY183ES | HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin |
Infineon Technologies AG |
|
3 | BFY183H | HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin |
Infineon Technologies AG |
|
2 | BFY183P | HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin |
Infineon Technologies AG |
|
1 | BFY183S | HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handlin |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |