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BFY182S PDF Datasheet

The BFY182S is Hirel NPN SilICon Rf Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BFY182S
HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 04 4 3 1 2 ESD: Electrostatic discharge sensitive

Infineon Technologies AG
Infineon Technologies AG
pdf

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Recommended search results related to BFY182S

Part No Description ( Function) Manufacturers PDF
BFY182   HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz ¥ qualified ¥ ESA/SCC Det

Siemens Semiconductor Group
Siemens Semiconductor Group
datasheet pdf
BFY182   HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SC

Infineon Technologies AG
Infineon Technologies AG
datasheet pdf
BFY182ES   HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SC

Infineon Technologies AG
Infineon Technologies AG
datasheet pdf
BFY182H   HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SC

Infineon Technologies AG
Infineon Technologies AG
datasheet pdf
BFY182P   HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SC

Infineon Technologies AG
Infineon Technologies AG
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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