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Datasheet BFS17W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BFS17W | NPN 1 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W NPN 1 GHz wideband transistor
Product specification Supersedes data of November 1992
1995 Sep 04
NXP Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17W
APPLICATIONS
Primarily intended as a mixer, oscillator and IF amplifier in UH |
 NXP Semiconductors |
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| 3 | BFS17W | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
Type BFS 17W
Marking Ordering Code MCs Q62702-F1645
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collec |
 Siemens Semiconductor Group |
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| 2 | BFS17W | Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain D SMD-package
1 1
13 581 94 9280 9510527
13 581
2
3
3
2
BFS17 Marking: E1 P |
 Vishay Telefunken |
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| 1 | BFS17W | NPN Silicon RF Transistor NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package
BFS17W
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS17W
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Pa |
 Infineon Technologies AG |
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