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Datasheet BFR949 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BFR949 | NPN Silicon RF Transistor BFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949F
Maximum Ratings Parameter Co |
 Infineon Technologies AG |
 |
| 3 | BFR949F | NPN Silicon RF Transistor BFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949F
Maximum Ratings Parameter Co |
Infineon Technologies AG |
|
| 2 | BFR949L3 | NPN Silicon RF Transistor BFR949L3
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
3 1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949L3
Maximum Ratings Parameter |
Infineon Technologies AG |
|
| 1 | BFR949T | NPN Silicon RF Transistor BFR949T
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
f T = 9 GHz
F = 1.0 dB at 1 GHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949T
Maximum Ratings Parameter
Markin |
Infineon Technologies AG |
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