No | Part number | Description ( Function ) | Manufacturers | |
6 | BFR90 | Silicon NPN Planar RF Transistor BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = Emitter, |
Vishay Telefunken |
|
5 | BFR90 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: |
Microsemi Corporation |
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4 | BFR90 | HIGH FREQUENCY TRANSISTOR BFR90 CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON J< MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 60°C Derate above 60°C Storage Temperature Symbol v CEO VCBO v EBO "C PD Tstq Value 15 20 3.0 30 180 2.0 - 65 to + 1 50 Unit Vdc Vdc Vdc mAdc mW mW/ |
Motorola Semiconductors |
|
3 | BFR90 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = |
Advanced Power Technology |
|
2 | BFR90A | Silicon NPN Planar RF Transistor BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltag |
TEMIC Semiconductors |
|
1 | BFR90G | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = |
Advanced Power Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |