Datasheet BFR31 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BFR31	JFET BFR30,31 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Symbol VDS vgs THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient RflJA •Package mounted on	Motorola Semiconductors	data
2	BFR31	N-channel field-effect transistors DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product speciﬁcation Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product speciﬁcation N-channel ﬁeld-effect transistors DESCRIPTION Planar epita	NXP Semiconductors	transistor
3	BFR31LT1	JFET Amplifiers(N-Channel) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFR30LT1/D JFET Amplifiers N–Channel 2 SOURCE 3 GATE BFR30LT1 BFR31LT1 3 1 1 DRAIN 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value	Motorola Inc	amplifier
4	BFR31LT1	JFET Amplifiers BFR30LT1, BFR31LT1 JFET Amplifiers N − Channel Features • Pb−Free Package is Available MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDrain−Source Voltage VDS 25 Vdc ÎÎÎÎ	ON Semiconductor	amplifier

BFR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BFR106	NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f	NXP Semiconductors	transistor
2	BFR106	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin	Siemens Semiconductor Group	transistor
3	BFR106	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta	Infineon Technologies AG	transistor
4	BFR106	Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB	New Jersey Semiconductor	data
5	BFR14B	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
6	BFR14C	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
7	BFR180	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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