No | Part number | Description ( Function ) | Manufacturers | |
6 | BFR280 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 280 REs Q62702-F1298 1=B 2=E 3=C Package S |
Siemens Semiconductor Group |
|
5 | BFR280 | NPN Silicon RF Transistor BFR280 NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile 3 communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m fT = 7.5 GHz F = 1.5 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR280 Maximum Ratings Parameter Marking REs 1=B Pin Configuratio |
Infineon Technologies AG |
|
4 | BFR280T | Silicon NPN Planar RF Transistor BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure D High transition frequency 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR280T |
Vishay Telefunken |
|
3 | BFR280TW | Silicon NPN Planar RF Transistor BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure D High transition frequency 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR280T |
Vishay Telefunken |
|
2 | BFR280W | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 280W REs Q62702-F1494 1=B 2=E 3=C Package |
Siemens Semiconductor Group |
|
1 | BFR280W | NPN Silicon RF Transistor BFR280W NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile 3 communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m fT = 7.5 GHz F = 1.5 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR280W Maximum Ratings Parameter Marking REs 1=B Pin Configuratio |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |