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Datasheet BFR183W Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | BFR183W | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA) BFR 183W
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q627 |
Siemens Semiconductor Group |
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1 | BFR183W | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package
with visible leads • Qualification report according to AEC-Q101 availab |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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