| No | Part number | Description ( Function ) | Manufacturers | |
| 8 | BFR183 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA) BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183 RHs Q62702-F1316 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter |
 Siemens Semiconductor Group |
|
| 7 | BFR183 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR183 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183 Marking Pin |
 Infineon Technologies AG |
|
| 6 | BFR183T | Silicon NPN Planar RF Transistor BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR183T Marking: RH Plastic case (SOT 23) 1 |
 Vishay Telefunken |
|
| 5 | BFR183T | NPN Silicon RF Transistor BFR183T NPN Silicon RF Transistor Preliminary data For low-noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VE |
Infineon Technologies AG |
|
| 4 | BFR183TF | Silicon NPN Planar RF Transistor VISHAY BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In ad |
 Vishay Siliconix |
|
| 3 | BFR183TW | Silicon NPN Planar RF Transistor BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR183T Marking: RH Plastic case (SOT 23) 1 |
Vishay Telefunken |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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