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Datasheet BFP740ESD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BFP740ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFP740ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-10-08
RF & Protection Devices
Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given |  Infineon | transistor |
BFP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BFP10 | (BFPxx) Class A Low Noise Thomson Semiconductors data | | |
| 2 | BFP136 | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3  Siemens Semiconductor Group transistor | | |
| 3 | BFP136 | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu  Infineon Technologies AG transistor | | |
| 4 | BFP136W | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3 Siemens Semiconductor Group transistor | | |
| 5 | BFP136W | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu Infineon Technologies AG transistor | | |
| 6 | BFP180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | | |
| 7 | BFP180W | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180W
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | |
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