No | Part number | Description ( Function ) | Manufacturers | |
2 | BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or charac |
Infineon Technologies AG |
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1 | BFP650F | Linear Low Noise SiGe:C Bipolar RF Transistor Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free |
Infineon |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |