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Datasheet BFP540 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BFP540 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package
with visible leads • Qualification report according to AEC-Q101 availab |
 Infineon Technologies AG |
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| 3 | BFP540ESD | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • High ESD robustness
typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package
with visible lead |
 Infineon |
|
| 2 | BFP540F | NPN Silicon RF Transistor BFP540F
NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET
to p v ie w
4 3
3 4
XYs
2 1
TSFP-4
45 - Line
A T s
1 2
d ir e c tio n o f u n r e e lin g
ESD: Electr |
Infineon Technologies AG |
|
| 1 | BFP540FESD | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • Excellent ESD performance
typical value 1000 V (HBM) • Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible lead |
 Infineon Technologies |
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