Datasheet BFP520F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFP520F	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small fla	Infineon Technologies AG

BFP5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFP520	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due	Infineon Technologies AG
BFP520	NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliabili	Siemens Semiconductor Group
BFP540	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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