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Datasheet BFP520 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BFP520 | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) SIEGET ®45
NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 |
 Siemens Semiconductor Group |
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| 2 | BFP520 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz
• High gain and low noise at high frequencies due to high transit freq |
 Infineon Technologies AG |
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| 1 | BFP520F | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small
fla |
Infineon Technologies AG |
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