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Datasheet BFP193 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BFP193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFP 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F12 | Siemens Semiconductor Group | transistor |
2 | BFP193 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
3 4
BFP193
2 1
ESD (Electrostatic d | Infineon Technologies AG | transistor |
3 | BFP193T | Silicon NPN Planar RF Transistor BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
D Low noise figu | Vishay Telefunken | transistor |
4 | BFP193TRW | Silicon NPN Planar RF Transistor BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
D Low noise figu | Vishay Telefunken | transistor |
5 | BFP193TW | Silicon NPN Planar RF Transistor BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
D Low noise figu | Vishay Telefunken | transistor |
BFP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BFP10 | (BFPxx) Class A Low Noise Thomson Semiconductors data | | |
2 | BFP136 | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3 Siemens Semiconductor Group transistor | | |
3 | BFP136 | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu Infineon Technologies AG transistor | | |
4 | BFP136W | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3 Siemens Semiconductor Group transistor | | |
5 | BFP136W | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu Infineon Technologies AG transistor | | |
6 | BFP180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | | |
7 | BFP180W | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180W
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | |
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Número de pieza | Descripción | Fabricantes | |
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