No | Part number | Description ( Function ) | Manufacturers | |
2 | BFP183W | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183W RHs Q62702-F1503 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector |
Siemens Semiconductor Group |
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1 | BFP183W | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFP183W 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |