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Datasheet BFP181W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 BFP181W   NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181W RFs Q62
Siemens Semiconductor Group
Siemens Semiconductor Group
datasheet BFP181W pdf
1 BFP181W   NPN Silicon RF Transistor

BFP 181W NPN Silicon RF Transistor  For low noise, high-gain broadband amplifier at 3 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 181W Maximum Ratings Parameter
Infineon Technologies AG
Infineon Technologies AG
datasheet BFP181W pdf


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SPS122

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