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Datasheet BFG235 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BFG235 | NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) BFG 235
NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz ESD: Elect |
 Siemens Semiconductor Group |
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| 1 | BFG235 | NPN Silicon RF Transistor BFG 235
NPN Silicon RF Transistor
For low-distortion broadband output amplifier
4
stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA
Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz
3 2 1
VPS051 |
 Infineon Technologies AG |
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