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Datasheet BFG19 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | BFG19 | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) BFG 19S
NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precauti |
 Siemens Semiconductor Group |
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| 12 | BFG19 | NPN Silicon RF Transistor BFG 19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 19S
Maxim |
 Infineon Technologies AG |
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| 11 | BFG193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFG 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 193 BFG193 Q62702- |
Siemens Semiconductor Group |
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| 10 | BFG193 | NPN Silicon RF Transistor BFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
4
F = 1.3 dB at 900 MHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG193
Maximum Ratings Parameter
Marking BFG |
Infineon Technologies AG |
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