No | Part number | Description ( Function ) | Manufacturers | |
1 | BFG10X | UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPL |
NXP Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
BFG10 | NPN 2 GHz RF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES � |
NXP Semiconductors |
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BFG10 | (BFGxxx) RF Bipolar Transistors 2.3 RF Bipolar transistors 2.3.1 Wideband transistors RF wideband transistors: http://www.semiconductors.philips.com/markets/mms/products/discretes/key_solutions/multimarket/transistors/25_45ghz_wideband/index.html Wideband transistors The fT-IC curve represents Transition Fre |
Philips |
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BFG10W | UHF power transistor |
NXP Semiconductors |
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.4M.64FR10 | Diode ( Rectifier ) |
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.4M.64FR10-1N816 | Diode ( Rectifier ) |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |