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Datasheet BFC51 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BFC514TH GENERATION MOSFET

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC51 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.15
Seme LAB
Seme LAB
mosfet


BFC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BFC40NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 3.55 (0.140) 3.81 (0.150) SEME BFC40 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS VDSS ID(cont) RDS(on) 1500V 2A 8.00W 4.
Seme LAB
Seme LAB
mosfet
2BFC434TH GENERATION MOSFET

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC43 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.15
Seme LAB
Seme LAB
mosfet
3BFC434TH GENERATION MOSFET

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC43 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.15
Seme LAB
Seme LAB
mosfet
4BFC505NPN wideband cascode transistor

DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband cascode transistor FEATURES • Small size • High pow
NXP Semiconductors
NXP Semiconductors
transistor
5BFC514TH GENERATION MOSFET

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC51 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.15
Seme LAB
Seme LAB
mosfet
6BFC520NPN wideband cascode transistor

DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor FEATURES • Small size • High pow
NXP Semiconductors
NXP Semiconductors
transistor
7BFC60N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS

LAB TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) SEME BFC60 2 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. 4.83 (0.190) 3.56 (0.140) N–CHA
Seme LAB
Seme LAB
mosfet



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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