No | Part number | Description ( Function ) | Manufacturers | |
9 | BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 998R Marking Ordering Code MOs Q62702-F1177 PIN Configuration 1=D 2=S Package 3 = G1 4 = G2 SOT-143R A |
Siemens Semiconductor Group |
|
8 | BF998R | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled |
NXP Semiconductors |
|
7 | BF998R | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High |
Vishay Telefunken |
|
6 | BF998R | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF998... ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF998 SOT143 1=S 2=D 3=G2 4=G1 - |
Infineon Technologies AG |
|
5 | BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High |
Vishay Telefunken |
|
4 | BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High |
Vishay Telefunken |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |