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Datasheet BF995 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BF995 | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF995
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes D High cros | Vishay Telefunken | gate |
2 | BF995 | Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) Silicon N Channel MOSFET Tetrode
q
BF 995
For input and mixer stages in FM and VHF TV tuners
Type BF 995
Marking MB
Ordering Code (tape and reel) Q62702-F936
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak | Siemens Semiconductor Group | tv |
3 | BF995A | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF995
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes D High cros | Vishay Telefunken | gate |
4 | BF995B | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF995
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes D High cros | Vishay Telefunken | gate |
BF9 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BF900 | Sicherungshalter Type BF900 Sicherungshalter
IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen
Sicherungshalter f� Inter Control data | | |
2 | BF901 | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
3 | BF901R | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
4 | BF9024SPD-M | P-Channel MOSFET and Schottky Diode BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
8
7
6
5
Features MOSFE BYD mosfet | | |
5 | BF9028DND-A | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
D D DD 87 6 5
Features BYD mosfet | | |
6 | BF9028DND-GE | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z BYD mosfet | | |
7 | BF9028DNT | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. .
TSSOP-8
1 : drain1 2, BYD mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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