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Datasheet BF994S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | BF994S | N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS
DATA SHEET
BF994S N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 July 1993
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES • Protected against excessive input voltage surges by integrated b |
NXP Semiconductors |
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4 | BF994S | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF994S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D Integrated gate protection diodes D High cross modulation performance |
Vishay Telefunken |
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3 | BF994S | Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) Silicon N Channel MOSFET Tetrode
q
BF 994 S
For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners
Type BF 994 S
Marking MG
Ordering Code (tape and reel) Q62702-F1020
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum Ratings Para |
Siemens Semiconductor Group |
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2 | BF994SA | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF994S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D Integrated gate protection diodes D High cross modulation performance |
Vishay Telefunken |
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Número de pieza | Descripción | Fabricantes | |
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