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Datasheet BF960NF06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BF960NF06N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF960NF06 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
BYD
BYD		mosfet
2BF960NF06TN-Channel MOSFET

BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
BYD
BYD		mosfet


BF9 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BF900Sicherungshalter

Type BF900 Sicherungshalter IEC 60127-6 250V 6,3A Bezeichnung / Kennzeichnung Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen Sicherungshalter f�
Inter Control
Inter Control		data
2BF901Silicon n-channel dual gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES • Intended for low voltage operation
NXP Semiconductors
NXP Semiconductors		gate
3BF901RSilicon n-channel dual gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES • Intended for low voltage operation
NXP Semiconductors
NXP Semiconductors		gate
4BF9024SPD-MP-Channel MOSFET and Schottky Diode

BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. 8 7 6 5 Features MOSFE
BYD
BYD		mosfet
5BF9028DND-AN-Channel MOSFET

BYD Microelectronics Co., Ltd. BF9028DND-A 20V N-Channel MOSFET General Description The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. D D DD 87 6 5 Features
BYD
BYD		mosfet
6BF9028DND-GEN-Channel MOSFET

BYD Microelectronics Co., Ltd. BF9028DND-GE 20V N-Channel MOSFET General Description The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. Features z VDS=24 V z
BYD
BYD		mosfet
7BF9028DNTN-Channel MOSFET

BYD Microelectronics Co., Ltd. BF9028DNT 20V N-Channel MOSFET 85 General Description The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. . TSSOP-8 1 : drain1 2,
BYD
BYD		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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