Datasheet BF599 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BF599	NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) NPN Silicon RF Transistor q q BF 599 Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion Type BF 599 Marking NB Ordering Code (tape and reel) Q62702-F979 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-b	Siemens Semiconductor Group	transistor
2	BF599	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)	KEC(Korea Electronics)	transistor
3	BF599	Surface mount Si-Epitaxial PlanarTransistors BF 599 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusem	Diotec Semiconductor	transistor
4	BF599	EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR TECHNICAL DATA BFS20/BF599 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage BFS20 BF599 VEBO Collector C	KEC	transistor

BF5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BF502	NPN SILICON RF TRANSISTOR	Siemens Semiconductor Group	transistor
2	BF5020	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f	Infineon	mosfet
3	BF5020R	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f	Infineon	mosfet
4	BF5020W	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-f	Infineon	mosfet
5	BF503	NPN SILICON RF TRANSISTOR	Siemens Semiconductor Group	transistor
6	BF5030	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo	Infineon	mosfet
7	BF5030R	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo	Infineon	mosfet

Esta página es del resultado de búsqueda del BF599. Si pulsa el resultado de búsqueda de BF599 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap