No | Part number | Description ( Function ) | Manufacturers | |
2 | BF543 | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source vo |
Siemens Semiconductor Group |
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1 | BF543 | Silicon N-Channel MOSFET Triode BF543 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID V |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |