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BF245A PDF Datasheet

The BF245A is N-channel Fet, N-channel Amplifiers. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 BF245A
N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES • Interchangeability of drain and source connections • Frequencie

NXP Semiconductors
NXP Semiconductors
pdf
6 BF245A
N-Channel junction field-Effect Transistors

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
5 BF245A
N-Channel Amplifiers

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG VGS IGF PD TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation @TA=25°C Der

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 BF245A
JFET VHF/UHF Amplifiers

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range 3 DRAIN Symbol VDS VDG VGS ID IG(f) PD Tstg Value ±30 30 3

ON Semiconductor
ON Semiconductor
pdf
3 BF245A
Trans JFET N-CH 30V 100mA 3-Pin TO-92

New Jersey Semiconductor
New Jersey Semiconductor
pdf
2 BF245A
JFET VHF/UHF AMPLIFIER

BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C Storage Channel Temperature Range Symbol VDS vdg vgs id 'G(f) PD Tstq Value ±30 30 30 100 10 360 2.88 -65 to +150 Unit Vdc Vdc Vdc mAdc mAdc mW mW/°C

Motorola Semiconductors
Motorola Semiconductors
pdf

[1]    [2]    

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Vishay Semiconductor
Vishay
pdf
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On Semiconductor
ON Semiconductor
pdf

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