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BF2030 PDF Datasheet

The BF2030 is SilICon N-channel MOSFET Tetrode, SilICon N-channel MOSFET Tetrode (for Low. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
5 BF2030
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)

BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BF 2030 Marking Ordering Code NEs Q62702-F1773 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ratings Parameter

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
4 BF2030
Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Hum

Infineon Technologies AG
Infineon Technologies AG
pdf
3 BF2030R
Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Hum

Infineon Technologies AG
Infineon Technologies AG
pdf
2 BF2030W
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)

BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Q62702-F1774 Pin Configuration 1=D 2=S 3 = G1 4 = G2 Package SOT-343 BF 2030W NEs Maximum Ratings Paramet

Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
1 BF2030W
Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Hum

Infineon Technologies AG
Infineon Technologies AG
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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