No | Part number | Description ( Function ) | Manufacturers | |
6 | BF199 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package CE B RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipat |
CDIL |
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5 | BF199 | RF Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF199/D RF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER BF199 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above |
Motorola Inc |
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4 | BF199 | NPN medium frequency transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 07 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 25 V). APPLICATIONS • Output |
NXP Semiconductors |
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3 | BF199 | NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR |
Micro Electronics |
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2 | BF199 | NPN Silicon Transistor BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 Dimensions : Millimetres Pin Configuration: 1. Base 2. Emitter 3. Collector Page 1 13/05/08 V1.1 BF199 N |
Multicomp |
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1 | BF199 | NPN RF Transistor BF199 BF199 NPN RF Transistor 1 TO-92 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 40 4.0 50 - 55 ~ 150 Uni |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |