No | Part number | Description ( Function ) | Manufacturers | |
2 | BF1205 | Dual N-channel dual gate MOS-FET DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias • Internal s |
NXP Semiconductors |
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1 | BF1205C | Dual N-channel dual gate MOS-FET BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal |
NXP Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |