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Datasheet BDY55X Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | BDY55X | Bipolar NPN Device BDY55X
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 |
Seme LAB |
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1 | BDY55X | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY55X
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS ·Designed for general-purpose switchin |
Inchange Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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