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Datasheet BDY54 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BDY54 | NPN SILICON TRANSISTORS DIFFUSED MESA |
 ETC |
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| 4 | BDY54 | Bipolar NPN Device BDY54
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
 Seme LAB |
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| 3 | BDY54 | (BDY53 / BDY54) NPN SILICON TRANSISTORS NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PTOT Collector-Emitter Voltage Collector-Base Voltage Emitter-Base |
 Comset Semiconductors |
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| 2 | BDY54 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY54
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed
APPLICATIONS ·Designed for general-purp |
 Inchange Semiconductor |
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