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Datasheet BDY26C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BDY26C | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY26C
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed
APPLICATIONS ·Designed for LF signal po |
 Inchange Semiconductor |
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| 1 | BDY26C | HIGH CURRENT NPN SILICON TRANSISTOR BDY26C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH CURRENT NPN SILICON TRANSISTOR FEATURES
• • • • • HIGH SWITCHING CURRENTS HIGH RELIABILITY CECC SCREENING OPTIONS SPACE QUALITY LEVELS |
 Seme LAB |
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