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BDY26 PDF Datasheet

The BDY26 is NPN SilICon Transistors Diffused Mesa, (bdy26 - Bdy28) NPN SilICon. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 BDY26
NPN SILICON TRANSISTORS DIFFUSED MESA

ETC
ETC
pdf
5 BDY26
(BDY26 - BDY28) NPN SILICON TRANSISTORS

BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Value

Comset Semiconductor
Comset Semiconductor
pdf
4 BDY26A
HIGH CURRENT NPN SILICON TRANSISTOR

BDY26A MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT NPN SILICON TRANSISTOR FEATURES • • • • • HIGH SWITCHING CURRENTS HIGH RELIABILITY CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.

Seme LAB
Seme LAB
pdf
3 BDY26B
HIGH CURRENT NPN SILICON TRANSISTOR

BDY26B MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT NPN SILICON TRANSISTOR FEATURES • • • • • HIGH SWITCHING CURRENTS HIGH RELIABILITY CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.

Seme LAB
Seme LAB
pdf
2 BDY26C
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDY26C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE

Inchange Semiconductor
Inchange Semiconductor
pdf
1 BDY26C
HIGH CURRENT NPN SILICON TRANSISTOR

BDY26C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT NPN SILICON TRANSISTOR FEATURES • • • • • HIGH SWITCHING CURRENTS HIGH RELIABILITY CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.

Seme LAB
Seme LAB
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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