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BDY23C PDF Datasheet

The BDY23C is Bipolar NPN DevICe. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BDY23C
Bipolar NPN Device

BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case)

Seme LAB
Seme LAB
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BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TStg Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDY23,

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BDY23   Bipolar NPN Device

BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed

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BDY23   Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3

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