No | Part number | Description ( Function ) | Manufacturers | |
1 | BDY23C | Bipolar NPN Device BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) |
Seme LAB |
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Recommended search results related to BDY23C |
Part No | Description ( Function) | Manufacturers | |
BDY23 | NPN SILICON TRANSISTORS/ DIFFUSED MESA |
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BDY23 | (BDY23 - BDY25)NPN SILICON TRANSISTORS BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TStg Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDY23, |
Comset Semiconductor |
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BDY23 | Bipolar NPN Device BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197 |
Seme LAB |
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BDY23 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed |
Inchange Semiconductor |
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BDY23 | Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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