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Datasheet BDX88 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | BDX88 | Power Darlingtons |
 STMicroelectronics |
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| 10 | BDX88 | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
·Co |
 Inchange Semiconductor |
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| 9 | BDX88 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package BDX88
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
 Seme LAB |
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| 8 | BDX88A | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
·Co |
Inchange Semiconductor |
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