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Datasheet BDX67 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | BDX67 | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX67 BDX67A BDX67B BDX67C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching a |
Seme LAB |
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10 | BDX67 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX67
DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Colle |
SavantIC |
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9 | BDX67 | NPN SILICON DARLINGTONS POWER TRANSISTOR BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to Ro |
Comset Semiconductors |
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8 | BDX67A | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX67 BDX67A BDX67B BDX67C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching a |
Seme LAB |
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Número de pieza | Descripción | Fabricantes | |
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