No | Part number | Description ( Function ) | Manufacturers | |
3 | BDX63A | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP c |
Seme LAB |
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2 | BDX63A | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX63 Collector-B |
Inchange Semiconductor |
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1 | BDX63A | NPN SILICON DARLINGTONS BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 |
Comset Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |