No | Part number | Description ( Function ) | Manufacturers | |
3 | BDX62C | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) |
Seme LAB |
|
2 | BDX62C | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX62 Collector |
Inchange Semiconductor |
|
1 | BDX62C | PNP SILICON DARLINGTONS BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX62 BDX62A BDX62B BDX62C BDX62 |
Comset Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |